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HP Recommended
HP EliteBook 650 15.6 inch G10 Notebook PC IDS Base Model
Microsoft Windows 11

I want to add the second chip of RAM

HWINFO shows the next model of RAM M471A2G43CB2-CWE

But this model is very hard to find

Could someone help to choose another model of RAM that has the most performance with this notebook?.. Interested in 32x2 or 16x2

Suggest, please to choose 2 chips of RAM

-------------------------------------------

HWINFO current Memory (RAM) report:

Memory 

[General Information]
Total Memory Size: 16 GBytes
Total Memory Size [MB]: 16384
[Current Performance Settings]
Maximum Supported Memory Clock: 1600.0 MHz
Current Memory Clock: 1596.1 MHz
Current Timing (tCAS-tRCD-tRP-tRAS): 22-22-22-52
Memory Channels Supported: 2
Memory Channels Active: 1
Command Rate (CR): 1T
Read to Read Delay (tRDRD_SG/TrdrdScL) Same Bank Group: 8T
Read to Read Delay (tRDRD_DG/TrdrdScDlr) Different Bank Group: 4T
Read to Read Delay (tRDRD_SD) Same DIMM: 12T
Read to Read Delay (tRDRD_DD) Different DIMM: 14T
Write to Write Delay (tWRWR_SG/TwrwrScL) Same Bank Group: 8T
Write to Write Delay (tWRWR_DG/TwrwrScDlr) Different Bank Group: 4T
Write to Write Delay (tWRWR_SD) Same DIMM: 12T
Write to Write Delay (tWRWR_DD) Different DIMM: 12T
Read to Write Delay (tRDWR_SG/TrdwrScL) Same Bank Group: 12T
Read to Write Delay (tRDWR_DG/TrdwrScDlr) Different Bank Group: 12T
Read to Write Delay (tRDWR_SD) Same DIMM: 16T
Read to Write Delay (tRDWR_DD) Different DIMM: 20T
Write to Read Delay (tWRRD_SG/TwrrdScL) Same Bank Group: 38T
Write to Read Delay (tWRRD_DG/TwrrdScDlr) Different Bank Group: 30T
Write to Read Delay (tWRRD_SD) Same DIMM: 10T
Write to Read Delay (tWRRD_DD) Different DIMM: 10T
Read to Precharge Delay (tRTP): 12T
Write to Precharge Delay (tWTP): 31T
Write Recovery Time (tWR): 20T
RAS# to RAS# Delay (tRRD_L): 8T
RAS# to RAS# Delay (tRRD_S): 4T
Row Cycle Time (tRC): 74T
Refresh Cycle Time (tRFC): 880T
Four Activate Window (tFAW): 34T

Row: 2 [Controller1ChannelADimm0/Bottom-Slot 2(right)] - 16 GB PC4-25600 DDR4 SDRAM Samsung M471A2G43CB2-CWE

[General Module Information]
Module Number: 2
Module Size: 16 GBytes
Memory Type: DDR4 SDRAM
Module Type: SO-DIMM
Memory Speed: 1600.0 MHz (DDR4-3200 / PC4-25600)
Module Manufacturer: Samsung
Module Part Number: M471A2G43CB2-CWE
Module Revision: 0.0
Module Manufacturing Date: Year: 2023, Week: 8
Module Manufacturing Location: 2
SDRAM Manufacturer: Samsung
DRAM Steppping: 0.0
Error Check/Correction: None
[Module Characteristics]
Row Address Bits: 17
Column Address Bits: 10
Module Density: 16384 Mb
Number Of Ranks: 1
Number Of Bank Groups: 4
Device Width: 8 bits
Bus Width: 64 bits
Die Count: 1
Module Nominal Voltage (VDD): 1.2 V
Minimum SDRAM Cycle Time (tCKAVGmin): 0.62500 ns (1600 MHz)
Maximum SDRAM Cycle Time (tCKAVGmax): 1.60000 ns
CAS# Latencies Supported: 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 24
Minimum CAS# Latency Time (tAAmin): 13.750 ns
Minimum RAS# to CAS# Delay (tRCDmin): 13.750 ns
Minimum Row Precharge Time (tRPmin): 13.750 ns
Minimum Active to Precharge Time (tRASmin): 32.000 ns
Supported Module Timing at 1600.0 MHz: 22-22-22-52
Supported Module Timing at 1466.7 MHz: 21-21-21-47
Supported Module Timing at 1333.3 MHz: 19-19-19-43
Supported Module Timing at 1200.0 MHz: 17-17-17-39
Supported Module Timing at 1066.7 MHz: 15-15-15-35
Supported Module Timing at 933.3 MHz: 13-13-13-30
Supported Module Timing at 800.0 MHz: 11-11-11-26
Supported Module Timing at 666.7 MHz: 10-10-10-22
Minimum Active to Active/Refresh Time (tRCmin): 45.750 ns
Minimum Refresh Recovery Time Delay (tRFC1min): 550.000 ns
Minimum Refresh Recovery Time Delay (tRFC2min): 350.000 ns
Minimum Refresh Recovery Time Delay (tRFC4min): 260.000 ns
Minimum Four Activate Window Delay Time (tFAWmin): 21.000 ns
Minimum Active to Active Delay Time - Different Bank Group (tRRD_Smin): 2.500 ns
Minimum Active to Active Delay Time - Same Bank Group (tRRD_Lmin): 4.900 ns
Minimum CAS to CAS Delay Time - Same Bank Group (tCCD_Lmin): 5.000 ns
[Features]
Module Temperature Sensor (TSOD): Not Supported
Module Nominal Height: 29 - 30 mm
Module Maximum Thickness (Front): 1 - 2 mm
Module Maximum Thickness (Back): 1 - 2 mm
Address Mapping from Edge Connector to DRAM: Standard

 

1 REPLY 1
HP Recommended

Hi:

 

You should be able to use the Crucial memory chips they indicate are compatible with your notebook:

 

HP - Compaq EliteBook 650 G10 | Memory RAM & SSD Upgrades | Crucial.com

 

Below is the link to the service manual where you can find the memory removal and replacement procedure:

 

Maintenance and Service Guide (hp.com)

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